Heavily doped silicon diodes of n⁺⁺-p⁺ type which exhibit the Mott temperature dependence of the forward current in a certain range of bias voltages and low temperatures have studied from the point of their use as ...

The technique of thermal vacuum deposition of Ge onto GaAs substrates has been used for obtaining nanocrystalline Ge films. Nanocrystalline character of the films is confirmed by atomic force microscopy of their surface ...

We investigated I-V curves and thermometric characteristics of heavily doped p-silicon structures at liquid helium temperatures. The variable-range hopping conductivity is shown to occur in the structures studied. The ...

To explain the experimental behaviour of differential characteristics (ideality factor, differential resistance) before and after radiation influence, a theoretical model of injection current flow mechanisms for the silicon ...